2SJ676 MOSFET Transistor

The 2SJ676 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 2SJ676 transistor as follows.

2SJ676 Transistor Specification

Transistor Code		2SJ676
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TPS
Drain-Source Voltage (Maximum)	VDS	200V
Drain Current (Maximum)	ID	2.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.8Ohm
Power Dissipation (Maximum)	PD	1.3W

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