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2SJ655 MOSFET Transistor

The 2SJ655 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 2SJ655 transistor as follows.

Circuit diagram symbol of the 2SJ655 transistor

2SJ655 Transistor Specification

Transistor Code 2SJ655
Transistor Type MOSFET
Control Channel Type P-Channel
Package TO220ML
Transistor SMD Code J655
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 12A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.136Ohm
Power Dissipation (Maximum) PD 25W
Drain-Source Capacitance 155pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 95nS

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