2SJ612 MOSFET Transistor

The 2SJ612 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 2SJ612 transistor as follows.

2SJ612 Transistor Specification

Transistor Code		2SJ612
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		PCP
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	2.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.245Ohm
Power Dissipation (Maximum)	PD	1W
Drain-Source Capacitance		40pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		60nS

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