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2SJ609 MOSFET Transistor

The 2SJ609 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 2SJ609 transistor as follows.

Circuit diagram symbol of the 2SJ609 transistor

2SJ609 Transistor Specification

Transistor Code 2SJ609
Transistor Type MOSFET
Control Channel Type P-Channel
Package TO126ML
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.295Ohm
Power Dissipation (Maximum) PD 10W
Drain-Source Capacitance 90pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 15nS

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