2SJ607 MOSFET Transistor

The 2SJ607 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 2SJ607 transistor as follows.

2SJ607 Transistor Specification

Transistor Code		2SJ607
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO220AB
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	83A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.011Ohm
Power Dissipation (Maximum)	PD	160W
Drain-Source Capacitance		1800pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		16nS
Total Gate Charge		188nC

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