2SJ605 MOSFET Transistor

The 2SJ605 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 2SJ605 transistor as follows.

2SJ605 Transistor Specification

Transistor Code		2SJ605
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO220AB
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	65A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.02Ohm
Power Dissipation (Maximum)	PD	100W
Drain-Source Capacitance		820pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		14nS
Total Gate Charge		87nC

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