2SJ605-Z MOSFET Transistor

The 2SJ605-Z is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 2SJ605-Z transistor as follows.

2SJ605-Z Transistor Specification

Transistor Code		2SJ605-Z
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	65A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.02Ohm
Power Dissipation (Maximum)	PD	100W
Drain-Source Capacitance		820pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		14nS
Total Gate Charge		87nC

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