2SJ601Z MOSFET Transistor

The 2SJ601Z is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 2SJ601Z transistor as follows.

2SJ601Z Transistor Specification

Transistor Code		2SJ601Z
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	36A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.025Ohm
Power Dissipation (Maximum)	PD	65W
Drain-Source Capacitance		580pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		12nS

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