2SJ598 MOSFET Transistor

The 2SJ598 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 2SJ598 transistor as follows.

2SJ598 Transistor Specification

Transistor Code		2SJ598
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-251
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	12A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.102Ohm
Power Dissipation (Maximum)	PD	23W
Drain-Source Capacitance		150pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		4nS

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