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2SJ583LS MOSFET Transistor

The 2SJ583LS is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 2SJ583LS transistor as follows.

Circuit diagram symbol of the 2SJ583LS transistor

2SJ583LS Transistor Specification

Transistor Code 2SJ583LS
Transistor Type MOSFET
Control Channel Type P-Channel
Package TO220FI
Drain-Source Voltage (Maximum) VDS 250V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 3.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.5Ohm
Power Dissipation (Maximum) PD 20W
Drain-Source Capacitance 95pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 21nS

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