2SJ583LS MOSFET Transistor

The 2SJ583LS is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 2SJ583LS transistor as follows.

2SJ583LS Transistor Specification

Transistor Code		2SJ583LS
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO220FI
Drain-Source Voltage (Maximum)	VDS	250V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	3.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.5Ohm
Power Dissipation (Maximum)	PD	20W
Drain-Source Capacitance		95pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		21nS

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