2SJ579 MOSFET Transistor

The 2SJ579 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 2SJ579 transistor as follows.

2SJ579 Transistor Specification

Transistor Code		2SJ579
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		PCP
Transistor SMD Code		JQ
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	1.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.8Ohm
Power Dissipation (Maximum)	PD	1.5W
Drain-Source Capacitance		35pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		7nS

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