2SJ555 MOSFET Transistor

The 2SJ555 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 2SJ555 transistor as follows.

2SJ555 Transistor Specification

Transistor Code		2SJ555
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO3P
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	60A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.024Ohm
Power Dissipation (Maximum)	PD	125W
Drain-Source Capacitance		4100pF
Operating Junction Temperature (Maximum)		150°C

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