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2SJ529 MOSFET Transistor

The 2SJ529 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 2SJ529 transistor as follows.

Circuit diagram symbol of the 2SJ529 transistor

2SJ529 Transistor Specification

Transistor Code 2SJ529
Transistor Type MOSFET
Control Channel Type P-Channel
Package DPAK
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 10A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.17Ohm
Power Dissipation (Maximum) PD 20W
Drain-Source Capacitance 580pF
Operating Junction Temperature (Maximum) 150°C

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