2SJ479 MOSFET Transistor

The 2SJ479 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 2SJ479 transistor as follows.

2SJ479 Transistor Specification

Transistor Code		2SJ479
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		LDPAK
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	30A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.025Ohm
Power Dissipation (Maximum)	PD	50W
Drain-Source Capacitance		950pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		290nS

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