2SJ358 MOSFET Transistor

The 2SJ358 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 2SJ358 transistor as follows.

2SJ358 Transistor Specification

Transistor Code		2SJ358
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT89
Transistor SMD Code		UA2
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.3Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		300pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		35nS

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