2SJ279S MOSFET Transistor

The 2SJ279S is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 2SJ279S transistor as follows.

2SJ279S Transistor Specification

Transistor Code		2SJ279S
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.2Ohm
Power Dissipation (Maximum)	PD	20W
Drain-Source Capacitance		340pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		35nS

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