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2SJ279S MOSFET Transistor

The 2SJ279S is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 2SJ279S transistor as follows.

Circuit diagram symbol of the 2SJ279S transistor

2SJ279S Transistor Specification

Transistor Code 2SJ279S
Transistor Type MOSFET
Control Channel Type P-Channel
Package TO252
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.2Ohm
Power Dissipation (Maximum) PD 20W
Drain-Source Capacitance 340pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 35nS

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