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2SJ265 MOSFET Transistor

The 2SJ265 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 2SJ265 transistor as follows.

Circuit diagram symbol of the 2SJ265 transistor

2SJ265 Transistor Specification

Transistor Code 2SJ265
Transistor Type MOSFET
Control Channel Type P-Channel
Package TO220ML
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 15V
Drain Current (Maximum) ID 15A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.08Ohm
Power Dissipation (Maximum) PD 30W
Drain-Source Capacitance 600pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 35nS

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