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2SJ256 MOSFET Transistor

The 2SJ256 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 2SJ256 transistor as follows.

Circuit diagram symbol of the 2SJ256 transistor

2SJ256 Transistor Specification

Transistor Code 2SJ256
Transistor Type MOSFET
Control Channel Type P-Channel
Package TO220ML
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 15V
Drain Current (Maximum) ID 18A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.055Ohm
Power Dissipation (Maximum) PD 30W
Drain-Source Capacitance 1200pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 50nS

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