2SJ256 MOSFET Transistor

The 2SJ256 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 2SJ256 transistor as follows.

2SJ256 Transistor Specification

Transistor Code		2SJ256
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO220ML
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	15V
Drain Current (Maximum)	ID	18A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.055Ohm
Power Dissipation (Maximum)	PD	30W
Drain-Source Capacitance		1200pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		50nS

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