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2SJ214S MOSFET Transistor

The 2SJ214S is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 2SJ214S transistor as follows.

Circuit diagram symbol of the 2SJ214S transistor

2SJ214S Transistor Specification

Transistor Code 2SJ214S
Transistor Type MOSFET
Control Channel Type P-Channel
Package TO263
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 10A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.18Ohm
Power Dissipation (Maximum) PD 40W
Drain-Source Capacitance 460pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 65nS

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