2SJ200 MOSFET Transistor

The 2SJ200 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 2SJ200 transistor as follows.

2SJ200 Transistor Specification

Transistor Code		2SJ200
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO3P
Drain-Source Voltage (Maximum)	VDS	180V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.25Ohm
Power Dissipation (Maximum)	PD	120W

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