2SJ190 MOSFET Transistor

The 2SJ190 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 2SJ190 transistor as follows.

2SJ190 Transistor Specification

Transistor Code		2SJ190
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		PCP
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	15V
Drain Current (Maximum)	ID	1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.2Ohm
Power Dissipation (Maximum)	PD	1.5W
Drain-Source Capacitance		60pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		13nS

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