2SJ189 MOSFET Transistor

The 2SJ189 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 2SJ189 transistor as follows.

2SJ189 Transistor Specification

Transistor Code		2SJ189
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TP
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	15V
Drain Current (Maximum)	ID	4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.17Ohm
Power Dissipation (Maximum)	PD	30W
Drain-Source Capacitance		600pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		50nS

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