2SJ181 MOSFET Transistor

The 2SJ181 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 2SJ181 transistor as follows.

2SJ181 Transistor Specification

Transistor Code		2SJ181
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		DPAK
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	15V
Drain Current (Maximum)	ID	0.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	15Ohm
Power Dissipation (Maximum)	PD	20W
Drain-Source Capacitance		55pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		20nS

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