2SJ165 MOSFET Transistor

The 2SJ165 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 2SJ165 transistor as follows.

2SJ165 Transistor Specification

Transistor Code		2SJ165
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SST
Drain-Source Voltage (Maximum)	VDS	50V
Gate-Source Voltage (Maximum)	VGS	7V
Drain Current (Maximum)	ID	0.1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	50Ohm
Power Dissipation (Maximum)	PD	0.25W
Drain-Source Capacitance		11pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		58nS

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