2SJ118 MOSFET Transistor

The 2SJ118 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 2SJ118 transistor as follows.

2SJ118 Transistor Specification

Transistor Code		2SJ118
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO3P
Drain-Source Voltage (Maximum)	VDS	140V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.4Ohm
Power Dissipation (Maximum)	PD	100W
Drain-Source Capacitance		450pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		50nS

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