2SJ116 MOSFET Transistor

The 2SJ116 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 2SJ116 transistor as follows.

2SJ116 Transistor Specification

Transistor Code		2SJ116
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO3
Drain-Source Voltage (Maximum)	VDS	400V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.75Ohm
Power Dissipation (Maximum)	PD	125W
Drain-Source Capacitance		330pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		45nS

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