2N7002TE MOSFET Transistor

The 2N7002TE is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 2N7002TE transistor as follows.

2N7002TE Transistor Specification

Transistor Code		2N7002TE
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT523
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	0.29A
Drain-Source On-State Resistance (Maximum)	RDS(on)	2Ohm
Power Dissipation (Maximum)	PD	0.15W
Operating Junction Temperature (Maximum)		150°C
Rise Time		12.4nS

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