2N7002KG8 MOSFET Transistor

The 2N7002KG8 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 2N7002KG8 transistor as follows.

2N7002KG8 Transistor Specification

Transistor Code		2N7002KG8
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT323
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	0.115A
Drain-Source On-State Resistance (Maximum)	RDS(on)	7.5Ohm
Power Dissipation (Maximum)	PD	0.38W
Drain-Source Capacitance		6pF
Operating Junction Temperature (Maximum)		150°C

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