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2N7002DW1T1 MOSFET Transistor

The 2N7002DW1T1 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 2N7002DW1T1 transistor as follows.

Circuit diagram symbol of the 2N7002DW1T1 transistor

2N7002DW1T1 Transistor Specification

Transistor Code 2N7002DW1T1
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOT363
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 0.115A
Drain-Source On-State Resistance (Maximum) RDS(on) 7.5Ohm
Power Dissipation (Maximum) PD 0.25W
Drain-Source Capacitance 25pF
Operating Junction Temperature (Maximum) 150°C

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