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2N7000TA MOSFET Transistor

The 2N7000TA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 2N7000TA transistor as follows.

Circuit diagram symbol of the 2N7000TA transistor

2N7000TA Transistor Specification

Transistor Code 2N7000TA
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO92
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 0.2A
Drain-Source On-State Resistance (Maximum) RDS(on) 5Ohm
Power Dissipation (Maximum) PD 0.4W
Drain-Source Capacitance 12pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 10nS
Gate-Threshold Voltage (Maximum) 3V

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