2N7000P MOSFET Transistor

The 2N7000P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 2N7000P transistor as follows.

2N7000P Transistor Specification

Transistor Code		2N7000P
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		ELINE
Drain-Source Voltage (Maximum)	VDS	60V
Drain Current (Maximum)	ID	0.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	10Ohm
Power Dissipation (Maximum)	PD	0.2W
Drain-Source Capacitance		60pF
Operating Junction Temperature (Maximum)		150°C

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