2N6789 MOSFET Transistor

The 2N6789 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 2N6789 transistor as follows.

2N6789 Transistor Specification

Transistor Code		2N6789
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO205
Drain-Source Voltage (Maximum)	VDS	150V
Drain Current (Maximum)	ID	3.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.8Ohm
Power Dissipation (Maximum)	PD	20W
Drain-Source Capacitance		600pF
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		14.3nC

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