2N6789-SM MOSFET Transistor

The 2N6789-SM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 2N6789-SM transistor as follows.

2N6789-SM Transistor Specification

Transistor Code		2N6789-SM
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220SM
Drain-Source Voltage (Maximum)	VDS	150V
Drain Current (Maximum)	ID	3.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.8Ohm
Power Dissipation (Maximum)	PD	20W
Operating Junction Temperature (Maximum)		150°C

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