2N6766 MOSFET Transistor

The 2N6766 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 2N6766 transistor as follows.

2N6766 Transistor Specification

Transistor Code		2N6766
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO204
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	30A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.085Ohm
Power Dissipation (Maximum)	PD	150W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		115nC

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