2N6661JAN MOSFET Transistor

The 2N6661JAN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 2N6661JAN transistor as follows.

2N6661JAN Transistor Specification

Transistor Code		2N6661JAN
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO39
Drain-Source Voltage (Maximum)	VDS	90V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	4Ohm
Power Dissipation (Maximum)	PD	6.25W
Drain-Source Capacitance		50pF
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		2V

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