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2N60L MOSFET Transistor

The 2N60L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 2N60L transistor as follows.

Circuit diagram symbol of the 2N60L transistor

2N60L Transistor Specification

Transistor Code 2N60L
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-262_TO-251_TO-252
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 2A
Drain-Source On-State Resistance (Maximum) RDS(on) 4.2Ohm
Power Dissipation (Maximum) PD 54W
Drain-Source Capacitance 30pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 25nS

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