2N5912 MOSFET Transistor

The 2N5912 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 2N5912 transistor as follows.

2N5912 Transistor Specification

Transistor Code		2N5912
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-99
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	4V
Drain Current (Maximum)	ID	0.04A
Power Dissipation (Maximum)	PD	0.5W
Operating Junction Temperature (Maximum)		150°C

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