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2N5909 MOSFET Transistor

The 2N5909 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 2N5909 transistor as follows.

Circuit diagram symbol of the 2N5909 transistor

2N5909 Transistor Specification

Transistor Code 2N5909
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-99
Drain-Source Voltage (Maximum) VDS 40V
Gate-Source Voltage (Maximum) VGS 4.6V
Drain Current (Maximum) ID 0.0005A
Power Dissipation (Maximum) PD 0.5W
Operating Junction Temperature (Maximum) 150°C

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