2N5555 MOSFET Transistor

The 2N5555 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 2N5555 transistor as follows.

2N5555 Transistor Specification

Transistor Code		2N5555
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-92
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	1V
Drain Current (Maximum)	ID	0.015A
Drain-Source On-State Resistance (Maximum)	RDS(on)	150Ohm
Power Dissipation (Maximum)	PD	0.35W
Operating Junction Temperature (Maximum)		150°C
Rise Time		5nS

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