2N5517 MOSFET Transistor

The 2N5517 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 2N5517 transistor as follows.

2N5517 Transistor Specification

Transistor Code		2N5517
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-71
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	3.8V
Drain Current (Maximum)	ID	0.0075A
Power Dissipation (Maximum)	PD	0.375W
Operating Junction Temperature (Maximum)		150°C

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