2N5460 MOSFET Transistor

The 2N5460 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 2N5460 transistor as follows.

2N5460 Transistor Specification

Transistor Code		2N5460
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-92
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	4V
Drain Current (Maximum)	ID	0.005A
Power Dissipation (Maximum)	PD	0.35W
Operating Junction Temperature (Maximum)		150°C

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