2N5115 MOSFET Transistor

The 2N5115 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 2N5115 transistor as follows.

2N5115 Transistor Specification

Transistor Code		2N5115
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-18
Drain-Source Voltage (Maximum)	VDS	30V
Drain Current (Maximum)	ID	0.06A
Drain-Source On-State Resistance (Maximum)	RDS(on)	100Ohm
Power Dissipation (Maximum)	PD	0.5W
Operating Junction Temperature (Maximum)		200°C
Rise Time		20nS

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