2N3819 MOSFET Transistor

The 2N3819 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 2N3819 transistor as follows.

2N3819 Transistor Specification

Transistor Code		2N3819
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO92
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	0.05A
Drain-Source On-State Resistance (Maximum)	RDS(on)	300Ohm
Power Dissipation (Maximum)	PD	0.35W
Operating Junction Temperature (Maximum)		150°C

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