2N2608 MOSFET Transistor

The 2N2608 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 2N2608 transistor as follows.

2N2608 Transistor Specification

Transistor Code		2N2608
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-18_TO-206AA
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	6V
Drain Current (Maximum)	ID	0.005A
Power Dissipation (Maximum)	PD	0.3W
Operating Junction Temperature (Maximum)		200°C

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