25P10 MOSFET Transistor

The 25P10 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 25P10 transistor as follows.

25P10 Transistor Specification

Transistor Code		25P10
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO251
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	30A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.05Ohm
Power Dissipation (Maximum)	PD	120W
Drain-Source Capacitance		790pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		80nS

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