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25N06 MOSFET Transistor

The 25N06 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 25N06 transistor as follows.

Circuit diagram symbol of the 25N06 transistor

25N06 Transistor Specification

Transistor Code 25N06
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220_TO-252
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 25A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.048Ohm
Power Dissipation (Maximum) PD 90W
Drain-Source Capacitance 320pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 90nS

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