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2301H MOSFET Transistor

The 2301H is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 2301H transistor as follows.

Circuit diagram symbol of the 2301H transistor

2301H Transistor Specification

Transistor Code 2301H
Transistor Type MOSFET
Control Channel Type P-Channel
Package SOT23
Transistor SMD Code 2301H
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 2A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.125Ohm
Power Dissipation (Maximum) PD 0.9W
Drain-Source Capacitance 75pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 35nS

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