1N60P MOSFET Transistor

The 1N60P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 1N60P transistor as follows.

1N60P Transistor Specification

Transistor Code		1N60P
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-92
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	1.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	9.3Ohm
Power Dissipation (Maximum)	PD	1W
Drain-Source Capacitance		20pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		25nS

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