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19MT050XF MOSFET Transistor

The 19MT050XF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 19MT050XF transistor as follows.

Circuit diagram symbol of the 19MT050XF transistor

19MT050XF Transistor Specification

Transistor Code 19MT050XF
Transistor Type MOSFET
Control Channel Type N-Channel
Package MTP
Drain-Source Voltage (Maximum) VDS 500V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 31A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.19Ohm
Power Dissipation (Maximum) PD 1140W
Drain-Source Capacitance 1165pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 165nS

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