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18N60 MOSFET Transistor

The 18N60 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 18N60 transistor as follows.

Circuit diagram symbol of the 18N60 transistor

18N60 Transistor Specification

Transistor Code 18N60
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-247_TO-3P
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 18A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.36Ohm
Power Dissipation (Maximum) PD 360W
Drain-Source Capacitance 280pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 22nS

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